Resistive switching in silicon suboxide films
WebResistive switches and memories from silicon oxide Nano Lett. 10 4105–10 [15] Yao J et al 2009 Resistive switching in nanogap systems on References SiO2 substrates Small 5 2910–5 [16] Mehonic A et al 2012 Resistive switching in silicon suboxide [1] Russo U, Ielmini D, Cagli C and Lacaita A L 2009 Filament films J. Appl. Phys. 111 0745071 … WebIntel Corporation. Aug 2024 - Present1 year 9 months. Hillsboro, Oregon, United States. Front-End-of-Line (FEOL) process integration engineer in Intel's Portland Technology Development (PTD) group.
Resistive switching in silicon suboxide films
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WebThin Solid Films. Volume 675, 1 April 2024, Pages 153-159. Improvement of the electrical and interfacial propertie of TiN/ZrO 2 by a modulated atomic layer deposition process with controlled O 3 dosing. Author links open overlay panel Hongseon Song a, Dokyoung Kim a, Younsoo Kim b, Hyungsuk Jung b, HanJin Lim b, Seunghyup Lee c, Kijung Yong a. WebRecent research shows ever-growing interest in the potential applications of memristive devices. Among the many proposed fields, sensing is one of the most interesting as it could lead to unprecedented sensor density and ubiquity in electronic systems. ...
WebWe report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon … WebMay 1, 2016 · Porous silicon dioxide (SiO 2) solid-electrolyte was prepared by the plasma enhanced chemical vapour deposition (PECVD) method using silane and oxygen as reactive gases.The resistive switching characteristics of the ∼280 nm-thick porous SiO 2-based electrochemical metallisation memory cells were investigated.The SEM and TEM images …
WebJan 29, 2013 · However, it is not yet clear how the silicon suboxide region can trigger resistive switching, and whether the silicon sub-oxide region is the only determiner of … WebStructural investigation of resistance switching in silicon-rich silica films Nanotechnology (IEEE-NANO) , 2015 IEEE 15th International Conference on July 27, 2015 Redox-based resistive RAM presents a development in non-volatile data storage, despite an incomplete understanding of switching mechanisms.
WebMar 9, 2024 · In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO2/Si-NCs/SiO2 multilayer structure acts as an RS …
WebApr 6, 2012 · ABSTRACT. We report a study of resistive switching in a silicon-based memristor/resistive RAM (RRAM) device in which the active layer is silicon-rich silica. The resistive switching phenomenon is an intrinsic property of the silicon-rich oxide layer and … mcpherson health clinicWebFeb 8, 2024 · Resistance switching, or Resistive RAM (RRAM) devices show considerable potential for application in hardware spiking neural networks (neuro-inspired computing) by mimicking some of the behavior of biological synapses, and hence enabling non-von Neumann computer architectures. Spike-timing dependent plasticity (STDP) is one such … lifeforce stonesWebSilicon-germanium Devices, S.Banerjee, Elsevier, 2001. Novel 3D CMOS , S.Dey and S.Banerjee, Solid State Electronics Trends, 2009 Ultra-low-power pseudospintronics devices via exciton condensation in coupled two-dimensional material systems ,X. Mou, L. F. Register and S. K. Banerjee, in Nanoscale Materials and Devices for Electronics, Photonics … life force storageWebOct 12, 2012 · [15] Yao J et al. 2009 Resistive switching in nanogap systems on SiO 2 substrates Small 5 2910–5. Go to reference in article Crossref Google Scholar [16] … lifeforce steelbookWebAug 24, 2024 · We studied intrinsic resistance switching behaviour in sputter-deposited amorphous silicon suboxide (a-SiO x ) films with varying degrees of roughness at the … life force soundtrackWebApr 9, 2024 · Resistive switching in silicon suboxide films. in Papers of Interest (silicon oxide memristors): Format: Journal Abstract Title: “Resistive switching in silicon … mcpherson harlingen texasWebResistive switching in silicon suboxide films Adnan Mehonic,1,a) Se´bastien Cueff,2 Maciej Wojdak,1 Stephen Hudziak,1 Olivier Jambois,3 Christophe Labbe´,2 Blas Garrido,3 Richard … mcpherson high school